发明名称 TREATING METHOD WITH PLASMA
摘要 PURPOSE:To activate a chemical reaction on the surface of a material to be treated while removing extraneous attached matter, and to obtain uniform etching by giving the material to be treated such as a substrate being in contact with plasma ultrasonic vibration and bringing the material to be treated into contact with plasma while mechanically vibrating the material minutely. CONSTITUTION:An electrode 1 grounded at the outside and an electrode 2 opposite to the electrode 1 are disposed into a vacuum tank 8 with a gas supply port 1-1 and a gas exhaust port 1-2 at a regular interval. A plurality of samples 6 are placed on the electrode 2, high-frequency power from a power supply 3 is applied to the electrode 2 through a matching box 4, and plasma 5 is generated between the electrodes 1 and 2. An ultrasonic vibrator 7 connected to a power supply 9 is set up to the electrode 2 in addition to the constitution, and the vibrator 7 is vibrated in frequency of 5kHz or more. Accordingly, the samples 6 are given mechanical fine vibrations in the same frequency as the vibrator 7, and an etching rate is increased while chemically active particles adhering on the surfaces are supplied with energy and scattered.
申请公布号 JPS594025(A) 申请公布日期 1984.01.10
申请号 JP19820111731 申请日期 1982.06.30
申请人 HITACHI SEISAKUSHO KK 发明人 TAJI SHINICHI
分类号 H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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