| 摘要 |
A mask which is resistant to a plasma etching treatment is formed by providing an etch resistant skin over a lithographically patterned radiation sensitive resist film present on a substrate. The etch resistant skin is formed by providing a layer of, for example, chromium on the patterned resist and on the exposed surface of the substrate, and then, baking so that the chromium reacts chemically with the resist to form the etch resistant skin around the patterned film. This method may be used for example to manufacture a photo mask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate.
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