| 摘要 |
PURPOSE:To improve the sensitivity of the device in an aiming short wave region by forming a semiconductor base body, to one main surface thereof a V-shaped groove is formed, first conduction type regions formed to the bottom and top section of the V- shaped groove and a second conduction type region formed to the other main surface of the semiconductor base body and using an exposed surface of a V-shaped groove surface as a light-receiving surface. CONSTITUTION:Wall surface 12 sections are used as carrier forming layers directly receiving incident light. The V-shaped grooves 11 or the wall surfaces 12 are formed in such a manner that striped resistmasks are formed to the surface of a silicon substrate, a main surface thereof is directed in a crystal orientation of (100), at proper pitches and the surface of the substrate is etched chemically while interposing said masks. The surface electrodes of elements are formed to the top surfaces of the V-shaped grooves and the bottoms of the V-shaped grooves. An n<+> layer in high impurity concentration is formed through an ion implantation method or a thermal diffusion method prior to the formation of the electrodes. A metal such as aluminum is evaporated onto the surface of the n<+> layer, and patterned to form the surface electrodes 15. A p<+> layer in high impurity concentration is formed on the back side of the silicon base body 1 through a thermal diffusion method, and a back electrode 6 is formed. |
