发明名称 MANUFACTURE OF SUBSTRATE OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent the oxidation of terminals and enable to equalize the shapes of al solder connection parts by a method wherein the surface of the terminal for connecting with solder is covered with a metallic material for preventing oxidation, and thereafter a film serving as a dam is formed at the solder connection part. CONSTITUTION:An adhesive auxiliary film 7 of Cr, a transition layer 8 by the simultaneous vapor-deposition of Cr and Cu, the first film 9 of Cu, the second film 11 of Au, and the third film 12 of Cr are successively formed, the fixed part is removed by photoetching, and thus a wiring pattern 6 and the terminal 4 are formed. Since the surface of the terminal 4 is covered with the second film 11 of Au, etc., it is not oxidized even by receiving heat treatment, and solder wet property does not deteriorate. The dam is formed, by the third film 12 of Cr which is difficult to be wet by solder, in the periphery of the terminal 4, therefore the shape of the solder connection part can be formed in a constant specified shape.
申请公布号 JPS592329(A) 申请公布日期 1984.01.07
申请号 JP19820110598 申请日期 1982.06.29
申请人 HITACHI SEISAKUSHO KK 发明人 OOSHIMA MUNEO
分类号 H05K3/34;H01L21/60 主分类号 H05K3/34
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