| 摘要 |
PURPOSE:To control the quantity of holes in a second semiconductor region while eliminating a soft error by forming a semiconductor layer with a second conduction type island section functioning as the source-drain and channel regions of an MOS type transistor onto an insulating substrate or an insulting layer. CONSTITUTION:The semiconductor layer 12 is formed onto a sapphire substrate 11 as the insulating substrate, and p<+> type channel stopper regions 13, 13 for isolating the island section are formed to the semicondutor layer 12. The n<+> type source-drain regions 14, 15 are formed to the island section, and the n type channel region 16 is formed between these regions 14, 15. One part of a thin n type layer obtained through epitaxial growth on the substrate 11 is utilized as it is as the channel region 16, and a p type storage region (the second semiconductor region) 17 giving or receiving holes with the channel stopper regions 13, 13 is formed to the surface while being separated from the channel stopper regions 13, 13. |
