| 摘要 |
PURPOSE:To perform the fine pattern copy in X-ray lithography with good accuracy by a method wherein the X-ray used for exposure is almost transmitted to the side wherein X-ray absorber patterns exist, and a thin conductive film supplied with potential is provided. CONSTITUTION:An X-ray mask 1 consists of a mask substrate 2, the Au X-ray absorber patterns 3, and mask substrate supporting bodies 4, and the thin conductive film 5 is formed on the mask substrate 2. An Al deposited film or a Si deposited film, etc. is used for the conductive film 5. Electrodes 9 are placed in the neighborhood of the X-ray mask 1 and a workpiece 8, and then a fixed voltage is impressed between the conductive film 5 and the electrodes 9. The total secondary electrons generated in exposure atmosphere are absorbed to the electrodes 9 and do not reach the upper part of a resist surface 6, therefore excess exposure can be avoided, and accordingly the fine pattern working for resist can be performed more securely. |
