发明名称 X-ray masks
摘要 In semiconductor manufacture, where X-ray irradiation is used, a thin silicon membrane can be used as an X-ray mask. This membrane has areas on which are patterns to define the regions to be irradiated. These regions are of antireflection material 3. With the thin, in the order of 3 microns, membranes used, fragility is a problem. Hence a number of ribs 1 of silicon are formed integral with the membrane, and which are relatively thick, 5 to 10 microns. The ribs may be formed by localised deeper boron deposition followed by a selective etch. <IMAGE>
申请公布号 GB2121980(A) 申请公布日期 1984.01.04
申请号 GB19820016847 申请日期 1982.06.10
申请人 * STANDARD TELEPHONES AND CABLES PUBLIC LIMITED COMPANY 发明人 JOHN CHRISTOPHER * GREENWOOD;DAVID WILLIAM * SATCHELL
分类号 G03F1/14;G03F1/22;G21K1/10;(IPC1-7):G21K1/10;G03C5/16 主分类号 G03F1/14
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