| 摘要 |
PURPOSE:To reduce a surface leak current, by etching the surface of a p-n junction composed of an InP epitaxial layer and an InGaAsP epitaxial layer with a solution containing sulfuric acid. CONSTITUTION:On an n-type InP substrate 1, the following layers are formed in order by a liquid phase epitaxial growth method; an n-type InP layer 2, a p-type In1-xGaxAs1-yPy layer 3, a p-type InP layer 4 and a p-type In1-xGaxAs1-yPy layer 5. After electrodes 10 and 11 are formed, a p-n junction 9 is separated by etching using bromine.methanol solution. Succesively, the exposed part of the junction 9 is subjected to etching using a liquid containing sulfuric acid. Thereby, a surface lead current caused by the etching waste matter of bromine.methanol solution can be reduced.
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