Stripper solution for cured positive photoresists

摘要

The invention relates to a stripper solution for cured positive photoresists and to a process for the use thereof. The solution contains a) 20 to 80 per cent by volume of a lower water-soluble alcohol, b) 10 to 50 per cent by volume of one or more glycols or glycol ethers and c) deionised water in such a proportion that the total of the proportions a), b) and c) gives 100 per cent by volume, and also d) an addition of a basic alkali-free component or an acidic component in a proportion of 1 to 4 parts per thousand. In a bath filled with this stripper solution, even stressed positive photoresist layers can be detached, for example from semiconductor substrates, with ultrasonic assistance without problems and free of residue. Aluminium layers or polyimide layers located below the photoresist layer remain intact, and also there is no contamination.