发明名称 Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method.
摘要 <p>A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice the plasma flows from its source (13) to a treatment chamber (3). The plasma source is first flushed through with a flushing gas and when this has passed the cathodes (6), the reactant gas is fed into the plasma generator. The reactor used in this process is also described.</p>
申请公布号 EP0297637(A1) 申请公布日期 1989.01.04
申请号 EP19880201112 申请日期 1988.06.02
申请人 UNIV EINDHOVEN TECH 发明人 SCHRAM, DANIEL CORNELIS;KROESEN, GERARDUS MARIA WILHELMUS
分类号 C23C14/32;C23C14/22;C23C16/513;H05H1/42;(IPC1-7):H05H1/34;H05H1/32;C23C16/50 主分类号 C23C14/32
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