发明名称 |
Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method. |
摘要 |
<p>A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice the plasma flows from its source (13) to a treatment chamber (3). The plasma source is first flushed through with a flushing gas and when this has passed the cathodes (6), the reactant gas is fed into the plasma generator. The reactor used in this process is also described.</p> |
申请公布号 |
EP0297637(A1) |
申请公布日期 |
1989.01.04 |
申请号 |
EP19880201112 |
申请日期 |
1988.06.02 |
申请人 |
UNIV EINDHOVEN TECH |
发明人 |
SCHRAM, DANIEL CORNELIS;KROESEN, GERARDUS MARIA WILHELMUS |
分类号 |
C23C14/32;C23C14/22;C23C16/513;H05H1/42;(IPC1-7):H05H1/34;H05H1/32;C23C16/50 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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