| 摘要 |
PURPOSE:To increase the light-emitting efficiency for the titled element by a method wherein a semiconductor layer, which is very thin and has a large bandgap in the same degree as the de Broglie wavelength of the minority carrier in a thin film or in the degree several times of the above, is provided and th confinement effect of the carrier is markedly increased. CONSTITUTION:As ultrathin film confinement layers 5 and 7 have a bandgap of 2.3eV when they are turned to GaP, and there is a large bandgap difference almost close to 1eV between the above and that of InP which is 1.35eV, a very effective carrier condinement effect can be obtained. However, as the GaP layer (or an InGaP layer) is very thinly formed to the degree of 50Angstrom or thereabout, the accumulation of stress based on lattice mismatching is not developed to the extent wherein a misfit deslocation is generated. Also, said GaP layer has the advantage wherein it has the film thickness approximate to the de Broglie wavelength (50Angstrom ) which is sufficient for confinement of carrier. With the existence of these ultrathin film layers 5 and 7, the confinement effect of the carrier to be accumulated on an active layer 6 is increased, thereby enabling to effectively prevent the overflow of the InP clad layers 4 and 8 of the hot carrier in the high injection region by the help of Auger recoupling. |
