| 摘要 |
PURPOSE:To obtain a photoelectric conversion device by a method wherein an intrinsic or substantially intrinsic non-single crystals containing hydrogen or halogen are grown by plasma vapor phase under a fixed condition and an N layer is superposed thereupon, after a donor type clear conductive film is provided on a photo transmitting substrate or via an acceptor type clear conductive film, and B is doped by plasma treatment. CONSTITUTION:SnO2 12 containing 10wt% or less of Sb2O3 is vapor-deposited on ITO11 on a glass plate 1. Using B2H6, plasma treatment is performed by letting O2+Ar flow, and then B is doped into the conductive film 12, resulting in the prevention of the decrease of clarity. Next, the substrate temperature is kept at 100-400 deg.C by masking a region 22, Si3N4-x(0<x<4), SixC1-x(0<x<1) and Si3N4-x(3<x<4) are laminated on the film 12 by plasma glow discharge, and accordingly the intrinsic or substantially intrinsic non-single crystal layer 4 doped with H2 or halogen is provided. Thereat, a P layer 3 is generated in the neighborhood of the conductive film 2 by B reverse diffusion, and thus a P-I junction is obtained. Thereafter, when an N layer 5 is superposed, and Al electrodes 6 and 20 are added, a photoelectric conversion device of high efficiency can be obtained. |
