| 摘要 |
PURPOSE:To eliminate the disconnection of the wiring in the second layer by giving selective etching by means of a mask to the insulation film provided on the conductor layer on a semiconductor substrate and then making the shape of the insulation film tapered after applying etching with reactive ions that contain C, F, H and applying etching to the conductor layer using the tapered film as a mask. CONSTITUTION:An SiO2 is covered on an Si substrate 1, and on this film an Al film to become a first conductor layer is provided, and the whole is covered by an SiO2 film 4 that is given by the plasma gaseous phase growth method. Next, on this film 4 a resist 5 of a specified pattern and the exposed portions of the film 4 are removed by reactive ion etching that uses a mixture of CF4 and H2 gases. After removing the resist 5, the brim of the residual film 4 is made inclined by reactive ion etching that uses a mixture of C3F8 and H2 gases. By the similar etching that uses a mixture of CCl2 and Cl2 employing the film 4 as a mask, the inclination at the periphery of the residual film is produced, then, an aluminium film 7 that is to become a second conductor layer through the SiO2 film 6 is made to cover thereon. |
