| 摘要 |
PURPOSE:To reduce leakage currents and to elongate life of a device, by providing a highly resistive region at the interface between an optical guide layer and an embedded layer, and separating the confining parts of a current and light. CONSTITUTION:On an N type InP substrate 1, an N type InP optical guide layer 2, an N or a P type InGaAsP active layer 3, a P type InP optical guide layer 4, and a P type InGaAsP cap layer 5 are sequentially laminated. Then a stripe shaped mask 6 is formed on the cap layer 5. Thereafter a highly resistive reion 7 is formed by thermal diffusion and the like. Then, a part of the highly resistive region 7 is removed by using a mask 8. Thereafter, a P type or N type InP embedded layer 9 is laminated, and the mask 8 is removed. Then, a P<+> diffused layer 10 reaching a part of the optical guide layer 4 from the side surface of the cap layer 5 is provided. Electrodes 11 are provided on the surface of the embedded layer 9 and on the surface of the substrate 1. |
