| 摘要 |
PURPOSE:To reduce the production stages and to improve the yield by coverting a gate electrode on an insulated plate with a gate insulating layer, forming a semiconductor layer and an electrode layer on the gate insulating layer successively to form a signal electrode and a picture element electrode and then putting a displaying medium between electrodes. CONSTITUTION:A gate electrode material is formed and patterned like a gate electrode 16 on the insulating plate 7 such as glass to form a gate insulating film 17 such as silicone oxide on the patterned gate electrode 16. Subsequently, an amorphous silicone semicondutor film 18 is accumulated on the film 17 by plasma discharge or the like. A metallic film to form the picture element electrode is formed and worked by evaporation or the like to form source, drain and picture element electrodes respectively. Then the display medium is put between a transparent electrode 13 on a base plate 14 such as glass and the thin film transistor produced by said procedure to form a display panel. |
