| 摘要 |
A MESFET with a relatively short channel and small source-to-gate and drain-to-gate spacing for minimal series resistance and maximum frequency response having no alignments or critical steps. In particular, a mask is used to define schottky metal as ohmic metal from the source/drain areas across a relatively undoped bare substrate to within a predetermined distance L of the schottky gate wherein the predetermined distance is a non-critical electrical short-circuit as to the surface of the bare substrate. Thus the source-to-gate and drain-to-gate distances are non-critical because the predetermined distance L can be as critically controlled as the single mask that defines it.
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