| 摘要 |
<p>PURPOSE:To improve the uniform size of an entire chip by exposing a chip circumference to light through an opening pattern which is previously corrected to a pattern shape to correct uneven exposure at the chip circumference. CONSTITUTION:The area near a chip is corrected with respect to its proximity effect and a fine pattern is yielded through electron beam batch drawing. For example, the widths of opening parts increase from the opening pattern 100 at the center to those at surroundings. Hereby, lack of the amount of exposure at a pattern circumferential region due to the proximity effect is corrected and the line width of the pattern is prevented from being narrowed. More specifically, when left and right sides of the chip, upper and lower sides of the same and four corners of the same are exposed, patterns corrected individually separately are employed.</p> |
