| 摘要 |
PURPOSE:To prevent the generation of displacement of the X-rays obstructing faculty mask provided on a membrane film when the mask to X-rays having the membrane film consisting of silicon oxide is to be formed by a method wherein the film is spread on a quartz frame to be held. CONSTITUTION:The film 12 of polyimide film, etc., having the quartz etching obstructing faculty is applied on a square quartz substrate 11 lacking in the circumference, and an SiO2 film 13 is adhered on the whole surface containing the film thereof. Then the films 14 of the plural number having the X-rays obstructing faculty are formed thereon using Cr or Pt, then diamond grinding is performed to the back of the substrate 11, the circumferential frame part 15 only is made to survive, another part is totally etched to be removed, and the back of the membrane film 13 of SiO2 is exposed. Accordingly because the membrane film 13 is spread on the quartz frame 15, the generation of displacement of the X-rays obstructing faculty film 14 due to thermal expansion is prevented. |
