| 摘要 |
PURPOSE:To worsen the wetting between a solution and a supporter, and prevent the leakage of the soultion by melting indium on the surface of a substrate supporter and solidifying it and then growing it epitaxially after removing it mechanically. CONSTITUTION:A solution supporter 8 is placed on a substrate supporter 9, and indium 12 and 13 are respectively placed in solution reservoirs 10 and 11. Indiums are melted and then cooled to solidify them. The solution supporter 8 is removed, and the indiums 12 and 13 are mechanically removed. After the removal rough surfaces 14 are formed on the surface of the substrate supporter 9 where the indiums 12 and 13 are removed. When molten indiums are mounted on these rough surfaces 14, they becomes round by their own surface tension. The positional relation between the solution supporter 8 and the substrate supporter 9 is shifted and the above process is repeated. |
