发明名称 DEVICE FOR SEMICONDUCTOR VAPOR GROWTH
摘要 PURPOSE:To heat a semiconductor substrate to a desired temperature uniformly for its sections with good control by inclining the axis of a nozzle of a reaction gas supply tube to bring the end of the nozzle near the plate surface of a semiconductor substrate. CONSTITUTION:A reaction gas supply tube 48B has double tube construction with an inner tube 49 and an outer tube 50, and it is introduced into a reaction vessel 24 from the upper part of its tubular body 22. The axes of the nozzle 51 of the inner tube 49 and the nozzle 52 of the outer tube 50 of the reaction gas supply tube 48B are tilted by 10-80 deg. with respect to the plate face of a semiconductor substrate 30 that is held on a holder 31. The tips of the nozzles 51 and 52 are close to the plate face of the semiconductor substrate 30 held on the holder 31.
申请公布号 JPS58213413(A) 申请公布日期 1983.12.12
申请号 JP19820095755 申请日期 1982.06.04
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NODA JIYUICHI;SHIBATA NORIYOSHI;YORIUME YUTAKA;TAKAGI NOBORU
分类号 C23C16/44;C23C16/455;H01L21/205;H01S5/00 主分类号 C23C16/44
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