SEMICONDUCTOR DEVICE FOR VAPOR GROWTH

摘要

PURPOSE:To heat to desired temperature a semiconductor substrate uniformly for its sections with good control by arranging an annular carbon heater so as to install internally a holder for holding the semiconductor substrate concentrically with the heater. CONSTITUTION:A heating means 42 is provided in order to heat a semiconductor substrate 30. This heating means 42 consists of an annular carbon heater 43 that is arranged in a reaction vessel 42 in such a manner that a holder 31 is internally placed concentrically with the heater 43. This annular carbon heater 43 is supported on the free ends of bar-shaped supporting electrodes 46 and 47 that are vertically planted on the end plate 21 of the reaction vessel 24 and project internally and externally of the reaction vessel 24 through insulation rings 44 and 45. The supporting electrodes 46 and 47 support the annular carbon heater 43 at positions symmetrical with respect to its axis, and they are connected to an electric high frequency wave source that lies outside of the reaction vessel 24.