| 摘要 |
PURPOSE:To improve the accuracy of etching while increasing the capability of treatment by setting up a lower electrode, on which a plurality of wafers are placed, and a plurality of upper electrodes corresponding to each wafer into one chamber. CONSTITUTION:The lower electrode 13, on which a plurality of the wafers can be placed, and a plurality of the upper electrodes 16 disposed so as to be able to be severally made correspond to these wafers are arranged into one chamber 10. The electrodes 16 are constituted so as to be able to each generate plasma among them and the electrode 13 independently. Consequently, plasma in each electrode 16 is not mutually made interfere by separating rings 18 because the electrodes 16 severally generate plasma among them and the electrode 13 independently. Accordingly, the capability of treatment is increased. |
