| 摘要 |
PURPOSE:To prevent charges transferred in a channel from by-passing a photodetecting section, by providing partially a region having an opposite conduction type to an exposed part of a substrate of the photodetecting section for the exposed part, in a cross gate type element. CONSTITUTION:A photodetecting region 15 of P type of the photodetecting section 14 is in contact and in parallel with an N channel 13 under a lower layer electrode 4, an N type photodetecting region 16 is extendingly pressed when being sandwiched between the regions 15 and one end is continuous to the channel 13 under an upper layer electrode. Through such consitution, when light is made incident to the regions 15, 16 at an photoelectric converting period, electrons are excited and since it takes place concentratedly at the P-N junction, the amount of generation of the excited electrons at a deep part in the substrate 1 is suppressed, the electrons are excited near the surface of the photo-detecting section 14, intensifying the amount of generation of electrons. Since the excited electrons are concentrated in the region 16 and the positive holes generated together with the electrons are absorbed in the region 15, the recombination of the excited electrons and positive holes does not take place in the photoelectric converting period. Thus, the transferred electrons do not by-pass the photodetecting section. |
