| 摘要 |
PURPOSE:To eliminate any adverse effects on the electrical properties of a semiconductor material, by employing ions of an element constituting the wafer material in detecting a register using an ion beam. CONSTITUTION:A GaMg alloy 1 is placed in a reservoir 2 and melted on heating. Under this state, a high electric field is applied between the alloy 1 and a W needle electrode 3. As a result, Ga ions and Mg ions with a high luminance and a high energy are emitted. First, only the Ga ions are transmitted, shaped into a spot with a microscopic diameter by means of a slit 5 and focused by means of an electrostatic lens 7 and is then deflected as at 8 to irradiate a GaAs substrate 9. A register is detected by employing a secondary electron detector 11 to position an Mg ion-implanted region. Then, the electric and magnetic field intensities of an EXB filter 10 are adjusted to pass only the Mg ions for effecting an ion implantation. This constitution eliminates the possibility that any undesired ions are implanted or sputtered in an ion-implanted or processed region. |
