| 摘要 |
PURPOSE:To uniformize the dark current generated at each light receiving part and to degrade its level, by coating whole surace of the light receiving part with a silicon nitride film. CONSTITUTION:A P-N junction of an N type diffused layer 4 and a P type base board 1 forms a light receiving part, and a built-in channel area 5 and storage gate 6, etc., constitute a CCD element. The 7 is a gate for transferring a carrier generated by the light receiving part to the channel area 5. In a soild image pickup element so constituted as mentioned aobve, a silicon nitride film 8 is provided to cover whole surface of a cell part. The silicon nitide film 8 generates hydrogen when growing. The hydrogen stays in a silicon oxide film 2 to fill always an interface between the silicon oxide film 2 and the N type area 4. Since the trap of the interface is filled with the hydrogen, dark current is reduced as the result. Also, dark current between large number of light receiving parts is uniformized. |
