| 摘要 |
PURPOSE:To obtain the highly integrated device by coating the surface of a mask layer on a semiconductor substrate with a metallic film from the oblique direction, further fining a resist pattern and further improving dry-etching resistance. CONSTITUTION:When the resist pattern of 1mum film thickness and width A= 0.5mum is formed to the GaAs substrate 1, an Al film 3 of thickness t=1,500Angstrom at theta=45 deg. is evaporated from the left and the right and films 3, 4 are superposed, the side surface of a window 5 is also coated with Al6, and width B is shrunk up to 0.2mum. A concave section 8 of width B is formed to the substrate 1 through etching in CCl2F2 gas by using a parallel plate type plasma device. When an electrode 9 of Au/Pt/Ti is formed from a section just above the substrate and the resist pattern 10 is removed by an acetone solution, an aimed fined Al pattern 9 is completed on the GaAs substrate. According to the constitution, a mask of the minute pattern can be formed with high accuracy in excellent controllability, and the highly integrated device can be formed. |
