| 摘要 |
PURPOSE:To obtain the transistor of high mobility by separating and extracting silica group glass of low alkali from phase-splitting glass at a temperature lower than a melting temperature of normal quartz glass by utilizing a phase-splitting phenomenon of glass and forming the thin-film transistor onto said silica group glass while using said silica group glass as a substrate. CONSTITUTION:SiO2-B2O3-Na2O Group glass in which the phase-splitting phenomenon is easy to be generated extremely is thermally treated at a temperature of 500-600 deg.C, and phase-separated into a SiO2 component and a B2O3-Na2O group component. A B2O3-Ma2O group component is separated and extracted through immersion in diluted hydrochloric acid at a temperature of approximately 90 deg.C, and the silica group glass, the SiO2 component therein is approximately 98%, is obtained. Said silica group glass is used as a substrate 1, a polycrystalline Si film 3 is deposited on the substrate through an SiO2 film 2, and P<+> type source and drain regions are formed in the film 3. The whole surface is coated with an SiO2 film 4, an opening is bored, an Al electrode 5 being in contact with these regions is formed, and the film 4 between these regions is also coated with a gate electrode 5. |
