| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance value of an electrode layer and improve loss characteristics, by forming a wall state substratum on both end edge parts of one surface of a dielectric layer, forming a first electrode layer on the other surface, and forming a second electrode layer on the surface of an inside dielectric layer of the substratum. SOLUTION: A wall state substratum 1 of a square frame type is formed on a peripheral edge part of one surface of a dielectric layer 2. A first electrode layer 3 is formed on almost the whole of the other surface of the dielectric layer 2. The inside dielectric layer 2 of the substratum 1 which is formed on one surface of the dielectric layer 2 is connected with a second electrode layer 4. It is desirable that the specific resistance of metal element constituting the first electrode layer 3 and the second electrode layer 4 is smaller than or equal to 3×10<-6>Ωcm. The thickness of the first electrode layer 3 and the second electrode layer 4 is set as large as possible, which is greater than or equal to 10μm. The substratum 1 is constituted of single crystal of silicon.
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