| 摘要 |
PURPOSE:To prevent the generation of troubles, such as a short-circuit, a floating capacitance, etc. by removing residual polysilicon of a second polysilicon layer adhering on the side wall of a first polysilicon layer through plasma etching. CONSTITUTION:The second polycrystalline silicon layer 2a is formed onto the first polycrystalline silicon wiring layer 1 formed onto a semiconductor substrate 11 through an insulating film 14, and patterned to form a wiring layer. A silicon dioxide film 17 is formed onto the layer 2a, and the film 17 and the layer 2a are patterned through reactive-ion-etching. The whole is etched by plasma for a fixed time, and the film 17 on the layer 2a being patterned is removed. Accordingly, the layer 2a is formed onto the layer 1 in accurate pattern width without a possibility of a short-circuit and the production of causes for the generation of a floating capacitance, etc. |
