| 摘要 |
PURPOSE:To simplify the processes of the reactive etching device by holding a wafer as a material to be treated between anodes set up oppositely and simultaneously executing etching treatment to both surfaces of the wafer. CONSTITUTION:Electrode plates 33a-33c as the three anodes are set up into a decompressing chamber 30, to which a reaction-gas feed pipe 31 and an exhaust pipe 32 are formed, at regular intervals. Wafer holders 34a, 34b as cathodes are mounted among these electrodes. The wafers 36 treated through etching are held to the wafer holders 34a, 34b. The wafer holders 34a, 34b are moved by a moving mechanism 35, and the wafers 36 are arranged oppositely to the surfaces of the electrodes 33a-33c. The inside of the decompressing chamber 30 is supplied with a predetermined reaction gas from the reaction-gas feed pipe 31 while an atmospheric gas is discharged by a fixed quantity of exhaust from the exhaust pipe 32, the inside of the chamber is decompressed, and both the surfaces and backs of the wafers 36 are etched in a desired manner through plasma discharge among the electrodes. |
