Vacuum deposition apparatus.

摘要

The invention provides vaccum deposition apparatus including a chamber (3), a vapor source (2), a deposition substrate (1) opposite to the vapor source (2) and an inlet (6) for a modifying gas, wherein in use the vapor source (2) is heated in the presence of a modifying gas to be deposited onto the substrate, characterized by an electron-beam supplying device (10,40) for emitting an electron-beam toward the substrate (1). The supply of electrons ionizes the gas only near the film surface being deposited thus allowing more even introduction.