发明名称 |
Sputter cathode for application of radioactive material |
摘要 |
Making a sputter cathode for applying a radioactive material includes obtaining a wafer containing a base material having a stable precursor dissolved therein. The base material is transmutable into a material having a relatively short atomic half-life. The wafer is atomically activated to transmute a portion of the stable precursor into a radioactive material. The base material may be silicon or germanium. The stable precursor may be 31P and the radioactive material may be 32P. Atomically activating the wafer may include exposing the wafer to a source of thermal neutrons by, for example, placing the wafer in a high-flux nuclear reactor for approximately four weeks.
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申请公布号 |
US5894133(A) |
申请公布日期 |
1999.04.13 |
申请号 |
US19960769240 |
申请日期 |
1996.12.18 |
申请人 |
IMPLANT SCIENCE CORPORATION |
发明人 |
ARMINI, ANTHONY J. |
分类号 |
C23C14/34;(IPC1-7):H01J37/317 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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地址 |
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