| 摘要 |
<p>A simple method for increasing the dynamic range of a GaAs FET amplifier. The drain resistance (RD) of the FET is adjusted to induce leakage current across the gate-source junction when excessive power levels are imposed on the gate. This current shunt (IS) is provided without added circuit components and therefore does not affect the sensitivity or bandwith performance of the amplifier.</p> |
