| 摘要 |
PURPOSE:To form a high quality, wide area single crystal semiconductor film in the uniform thickness on an insulator by transferring a single crystal semiconductor film formed on a semiconductor substrate by the epitaxial growth method onto a substrate providing an insulating layer at least on the surface through an insulating adhesive layer. CONSTITUTION:A high concentration impurity layer 2 having boron is formed on the surface of single crystal silicon substrate 1 having a resistivity of several ohm-cm or higher. Then, a single crystal silicon film 3 having a low impurity concentration is formed by epitaxial growth method under the reduced pressure condition. For example, a silicon dioxide film 4 is formed as an insulating film by the chemical vapor deposition (CVD) method on a single crystal silicon film 3. Meanwhile, an insulating substrate, for example, a quartz glass is prepared in addition to a silicon substrate and an insulating adhesive layer is coated on such insulating substrate. 5 indicates a quartz glass substrate and 6 indicates a high molecular resin film coated through rotating operation. Thereafter, the surface of silicon dioxide film 4 and the surface of high polymer resin film 6 are placed closely in contact and these two substrate are bonded through a heat processing. |
