| 摘要 |
PURPOSE:To form a circuit separating structure suitable for a high speed, highly integrated IC which needs only low power consumption, by forming a semiconductor region having the same conducting type as that of a substrate from the side surface to the bottom surface of a part of a semiconductor oxide film surrounding each bipolar element. CONSTITUTION:Donor impurities are partially diffused on the surface of a highly resistive, P<-> type, Si substrate 1. An N<+> embedded layer 2 is formed for each region or for each element. An N type Si layer 3 is epitaxially grown on the layer 2. Acceptor impurities are ion-implanted in the surface of the Si layer 3 through a mask 4 in order to form a P well. Oxidizing treatment is performed, and a P well 9 is formed in a part of the side of a region I. A P layer 10 is formed along the side surface and the bottom part of a separating oxide film 8 on the side of a region II. N<+> source and drain 18 and 18 are formed in the region I . Meanwhile an N<+> emitter 20 is formed at a part of the P<+> base surface in the region II, and an N<+> collector contact part 21 is formed. |
