| 摘要 |
PURPOSE:To form a pattern of a high form factor and high resolution by a small quantity of irradiation by forming a base material forming an added polymerizable active point through the irradiation of high energy rays in double- layer structure and using an organic high molecular material film as a lower layer and a silicon oxide film as an upper layer. CONSTITUTION:Base material films of two layers, the lower layer thereof consists of the organic high molecular material film and the upper layer thereof the silicon oxide film, are used, an irradiation pattern-shaped graft polymer film is formed onto the silicon oxide film of the upper layer, the silicon oxide film not coated with the graft polymer film is removed through etching while using the graft polymer film as a mask, and the organic high molecular material film in a region not coated with the silicon oxide film is removed through etching. The pattern can be transferred to the comparatively thick organic high molecular material film even when the thin silicon oxide film is used because the silicon oxide film forms the added polymerizable active point through the irradiation of high energy rays and is not etched at all through dry etching treatment using oxygen gas, an etching rate thereof is large to the organic high molecular material film. |
