| 摘要 |
PURPOSE:To contrive miniaturization of the capacitor for the titled semiconductor device as well as to reduce the parasitic capacity thereof by a method wherein an overlay-constructed capacitor, having a single dielectric of high dielectric constant, and a crossover wiring part consisting of laminated dielectric, having both high and low dielectric constant, are provided. CONSTITUTION:A metallized layer 9 is formed on a semiinsulating GaAs substrate 1, and the first layer of gate electrode 2 and a capacitor of MIM structure is constituted. An ohmic metallized layer 10 is formed and a source electrode 3 is formed in the same manner as above. An Si3N4 film 8 is covered on the above, the second layer of metallized layer 6 is superposed, and an MIM capacitor is completed. The capacitor can easily be made smaller in size using the film 8 having a high dielectric constant. Besides, the increase of the parasitic input capacitance between the gate 2 and the source 3 of FET caused by the use of a dielectric film 8 of high dielectric constant can be prevented by superposing a sufficiently thick SiO2 film 11 having a low dielectric constant. According to this constitution, a monolithic IC having excellent frequency characteristics can be obtained in high degree of integration on the GaAs substrate. |
