| 摘要 |
PURPOSE:To prevent the infiltration of moisture and others from the end parts of a pellet by a method wherein the end part of at least one layer thin film under a plasma nitride film is covered with the plasma nitride film at the end part of the chip of a semiconductor device. CONSTITUTION:In the figure, the device is in the structure wherein the end part of a vapor grown oxide film 4 is covered with the plasma nitride film 5. Therefore, the infiltration of moisture and other harmful substances can be prevented, and accordingly a semiconductor device of good moisture resistance is obtained. Next, the figure shows an example wherein this invention is applied in the case that an aluminum wiring 3 is formed on the vapor grown oxide film 4' by a double layer wiring structure, etc., and the end part of the vapor grown oxide film 4' under the aluminum wiring 3 is also covered with the plasma nitride film 5 besides the end part of the vapor grown oxide film 4 on the aluminum wiring 3. Thereby, the improvement by moisture resistance can be contrived much more securely than in the case of covering only the former. |
