| 摘要 |
A method for forming a protective layer from surface portions of a mesa-shaped semiconductor to electrically isolate a junction region formed within the semiconductor from external contaminants. A top contact electrode is formed on an upper surface of a substrate. An active region, having formed therein the junction, is formed on the bottom portion of the substrate. A support is then formed on the active region. The top contact is first used as an etching mask, and a chemical etchant is brought into contact with unmasked portions of the substrate to form a mesa-shaped structure with divergent side walls. The divergent side walls have bottom portions which include the active region and which extend beyond the periphery of the top contact electrode. The top contact is next used as an implant mask and particles are implanted in exposed portions of the side walls extending beyond the periphery of the top contact electrode to convert the exposed semiconductor material into the protective layer. |
