发明名称 THIN FILM SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily manufacture electrodes on the same surface of a semiconductor layer by a method wherein the thin film semiconductor layer is changed into low resistance and then electrode take-out terminals are provided. CONSTITUTION:An a-Si 12 which functions as a solar battery is laminated on a conductive substrate 11 wherein a conductive layer is adhered on a stainless substrate or insulator. The a-Si 12 is equipped with junctions such as P-N, P-I-N, M-I-S, and Schottky, and these junctions generate photovoltage. Clear electrode films 13 and 15 which take out output are formed on the surface of the a-Si 12. Where, the clear electrode film 13 is formed as the electrode for the light receiving surface of the a-Si 12. On the other hand, the electrode film 15 is formed at a distance from the electrode 13. The terminals 14 and 16 are formed respectively on these electrodes 13 and 15. The terminal 16 is formed by a method wherein the thin film semiconductor layer sandwiched by the thin film 15 and the substrate 11 is changed into low resistance. Thereby, electrodes can be easily formed on the same surface of a semiconductor layer.
申请公布号 JPS58196060(A) 申请公布日期 1983.11.15
申请号 JP19820078851 申请日期 1982.05.10
申请人 SHARP KK 发明人 YAMAUCHI YUTAKA
分类号 H01L31/04;H01L27/01;H01L27/142;H01L31/0224;H01L31/0392;H01L31/20 主分类号 H01L31/04
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