| 摘要 |
PURPOSE:To raise the mobility of carriers by such an arrangement wherein after a semiconductor layer is formed with a super fine particle film, itis converted into a polycrystalline film having such a grain size that is larger than single crystal or a specific value by performing heat treatment. CONSTITUTION:A gate electrode 22 is formed on a stratum 21 and an insulation layer 23 of silicon oxide, etc. is formed thereon. Next, a super fine particle film of cadmium selenide 24 is formed into a thickness of about 5,000Angstrom , and as it is processed by heat treatment at a temperature of about 350 deg.C in vacuum or inactive gas, the film 24 is calcined and a thin film of cadmium selenide of about 1,000Angstrom in thickness and of which grain size is about 100mum or of single crystal can be obtained. From this thin film, a thin film 25 is formed by photoetching method. Next, on the film 25, a metal is deposited by vacuum vaporization method, etc, and after that, it is formed into specified shapes and a source electrode 27 and a drain electrode 28 are obtained. |
