| 摘要 |
PURPOSE:To eliminate the unsatisfactory adhesion generating between a protruded electrode and a Cu lead when a bonding work is performed by a method wherein a mask pattern, which is used to leave an insulating film at a part inside the aperture located on an electrode lead-out part as a mask pattern to be used when the aperture is formed on the insulating film located on the electrode lead-out part, is used. CONSTITUTION:After an insulating film 4 has been formed on the surface of a semiconductor element, an electrode lead-out part 9 is provided by selectively removing the insulating film 10 on the electrode lead-out part located at the position where the protruded electrode will be formed. At this time, an aperture is provided leaving the film 10 at a part of the electrode lead-out part 9. A metal film 5 is then formed on films 4, 4' and 10. After the lead-out part 9 and the region excluding the circumference of the lead-out part 9 have been covered by a photoresist film 11, a protruded electrode 6 is formed by performing an Au plating. At this time, the surface of the electrode 6 is swelled up as much as the thickness of the insulating film 10 and formed into the surface of irreguralities, thereby enabling to increase the junction region of the Cu lead and the electrode 6 and also increase the adhesive strength. |
