| 摘要 |
PURPOSE:To improve resolution substantially while manufacturing the resist image of excellent shape by developing a resist consisting of a high molecular material containing an aromatic ring by a developer containing a solvent containing chlorine. CONSTITUTION:When the resist image is formed to a high molecular film consisting of the high molecular material containing the aromatic rings formed onto a substrate, the solvent containing chlorine is made contain in the developer. A high moleuclar material containing vinyl naphthalene or its derivative as constitutional molecules is used as one containing the aromatic rings. For example, a chloromethylstyrene-bivinyl naphthalene copolymer is synthesized, and polymer is dissolved in xylene, and filtered by a filter, and a resist liquid is obtained. A latent image is manufactured by using an electron-beam exposure device which applies the resist liquid onto the Si substrate through spin coating and obtains a uniform film, immersed in tetrachloroethylene and developed, and rinsed by a mixed solution of methyl ethyl ketone and ethanol, and a resist pattern is obtained. 80% Of the thickness of the film applied remains when the substrate is shrunk thermally and the film thickness of a resist pattern section is measured, and the resist pattern is formed completely. |
