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发明名称
Non-volatile semiconductor memory device and method for fabricating the same
摘要
申请公布号
EP1263037(A3)
申请公布日期
2005.07.20
申请号
EP20020011471
申请日期
2002.05.24
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人
NASU, TORU;NAGANO, YOSHIHISA
分类号
H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/02;H01L21/824
主分类号
H01L21/02
代理机构
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