| 摘要 |
PURPOSE:To obtain excellent uniformity with mixed crystals as well, by effecting epitaxial growth while realizing a supercooled state without giving any difference in time and space to the temp. of a soln., etc. CONSTITUTION:Two recesses 3, 4 are provided in the stationary part 1 of a sliding type carbon boat and a hole 5 is provided to a slider 2. A crystal 6 of a GaAs substrate having a Miller index (100) is stored in the recess 3 and a crystal 7 of a GaP solute source having a Miller index (111) is stored in the recess 4 with the (111) facets B faced upward. On the other hand, if an unsatd. In soln. 8 of P is stored in the hole 5 of the slider 2 and the slider is slid to conduct the melt 8 over the crystal 7, the crystal 7 dissolves in the soln. 8, thereby forming an In-Ga-P three-element soln. 8'. If the melt 8' is further conducted over the crystal 6 by sliding the slider 2, mixed crystal of In1-xCaxP is grown on the substrate 6.
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