PATTERN FORMATION

摘要

PURPOSE:To form a pattern having good shape ratio with a high resolution using a thin graft polymer by utilizing an oganic silicon polymer material film as the base material of graft polymerization. CONSTITUTION:An organic polymer material film 2 on the surface of a substrate 1 to be processed and an organic silicon polymer material film 3 is formed by glow discharge. The energy beam 4 is irradiated and an element is placed under the atmosphere of a single amount of gas 5. A graft polymer film 6 pattern is formed by selective graft polymerization. The unirradiated region is dry-etched and the organic polymer material film 2 is removed by dry-etching method with the patterned organic silicon polymer material film 3 used as the mask. A pattern can be formed on a comparatively thick organic polymer material film 2 using a very thin graft polymer film 6. The surface of substrate 1 to be processed is etched with an organic polymer material film 2 used as the mask.