| 摘要 |
1. A method of manufacturing multilayer interconnecting circuits, according to which a stack of layers (11), comprising alternately conductive interconnection areas and insulating areas having transverse passage connecting the conductive areas, is formed on a temporary metal substrate (1) covered by a first conductive layer (2) of an alloy having a low melting point, then on the last layer (9) of the stack (11) a permanent substrate (10) is glued, which is situated on the opposite side of the stack (11) with respect to the temporary substrate (1) and then the stack of layers is separated from the temporary substrate (1) by melting of the first layer (2), thus exposing conductive areas (30, 31, 32) of the stack which are designed to connect inner conductive areas to the outside. |
