| 摘要 |
PURPOSE:To permit a single crystal region to be formed at desired position on an amorphous insulating substrate, through the control of the cooling rate after annealing, by coating the surface of a semiconductor film with an insulating film and providing an opening in the insulating film. CONSTITUTION:With a silica glass 11 employed as an amorphous insulating substrate, a polysilicon layer 15 is deposited thereon, and a silicon oxide film 12 is deposited on the silicon layer 15. Openings 13 are formed in the silicon oxide film 12 to irradiate the silicon layer 15 with a laser light 14 form recrystallization. The silicon layer 15 is once melted and then recrystallized. At that time, the silicon layer 15 hardens from the vicinities of the openings 13 because heat escapes from the openings 13, so that growth takes place horizontally. Accordingly, forming an opening in the center of a region for forming an element makes it possible to form within one grain an element having a size smaller than about 10mum. After the recrystallization by means of the laser light, the silicon oxide film 12 is removed, and each element-forming region is separated as an island, thereby making is possible to obtain an element having a small parasitic capacitance. In addition, since no grain boundary exists in the active region of the element, there are small characteristic variations. |
