| 摘要 |
1. Electrically programmable field effect transistor with a silicon dioxide layer provided on the surface of a semiconductor substrate (24) of a first conductivity type, and a superimposed metal layer consisting of aluminium, and with two ion-implanted regions of enhanced conductivity of the opposite conductivity type of that of the substrate, the inner edges of these regions being arranged in self-alignment with the outer edges of the metallic layer, and thus forming source and drain regions of the field effect transistor, and with another layer provided inside the silicon dioxide layer, the outer edges of said additional layer being in alignment with the inner edges of the two ion-implanted regions, characterized in that the additional layer immediately beneath the metallic layer consists of a matrix of the reaction products aluminum oxide and silicon of the solid reaction executed at temperatures of 400 to 500 degrees C, in accordance with the reaction equation 4Al + SiO2 --> 2Al2 O3 + 3Si and which forms a charge storage region for an electrically programmable field effect transistor. |
