| 摘要 |
<p>1. A process of making a laser of hydrogen-containing amorphous silicon (101) including a step of depositing said layer of amorphous silicon on a support (100), characterized by comprising the following sequence of steps : a) applying a metal skin (102) onto said layer of amorphous silicon (101), the metal being selected from the group comprising those having a high affinity to atomic hydrogen, and said metal skin having a thickness of at least 0.5 nm ; b) hydrogenating said metal skin (102) ; c) performing a thermal treatment between 100 degrees C and the crystallization temperature of the silicon, said treatment resulting in the diffusion of hydrogen from said metal skin, which then acts as a source of atomic hydrogen, into said layer of amorphous silicon.</p> |
